This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
+0.10
–0.05
0.40
3
+0.10
–0.06
0.16
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1
2
(0.95) (0.95)
1.9 0.1
+0.20
2.90
–0.05
■ Absolute Maximum Ratings Ta = 25°C
10˚
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
1: Base
2: Emitter
3: Collector
20
V
3
15
V
EIAJ: SC-59
Mini3-G1 Package
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
Marking Symbol: U
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VEBO
VBE
Conditions
Min
30
3
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 6 V, IE = −1 mA
0.72
V
Forward current transfer ratio *
Transition frequency
hFE
VCB = 6 V, IE = −1 mA
65
260
1.0
fT
VCB = 6 V, IE = −1 mA, f = 100 MHz
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
450
650
0.8
MHz
pF
Reverse transfer capacitance
(Common emitter)
Cre
Power gain
GP
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
dB
Noise figure
NF
VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
C
D
hFE
65 to 160
100 to 260
Publication date: March 2003
SJC00114BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2404
GP IE
NF IE
bie gie
40
35
30
25
20
15
10
5
12
10
8
20
18
16
14
12
10
8
yie = gie + jbie
150
f = 100 MHz
Rg = 50 kΩ
Ta = 25°C
f = 100 MHz
Rg = 50 Ω
Ta = 25°C
VCE = 10 V
−4 mA
−7 mA
100
VCE = 10 V
6 V
−2 mA
100
58
6
−1 mA
VCE = 6 V, 10 V
4
58
6
25
4
25
2
2
f = 10.7 MHz
0
0
0
− 0.1
−1
−10
−100
− 0.1
−1
−10
−100
0
3
6
9
12
15
(
)
(
)
(
)
Emitter current IE mA
Emitter current IE mA
Input conductance gie mS
bre gre
bfe gfe
boe goe
1.2
1.0
0.8
0.6
0.4
0.2
0
0
−1
−2
−3
−4
−5
−6
0
−20
10.7
25
10.7
58
150
yre = gre + jbre
VCE = 10 V
−1 mA
100
−2 mA
−4 mA
150
100
−2 mA
−4 mA
−1 mA
−40
−4 mA
−7 mA
150
58
100
58
IE = −7 mA
−60
f = 150 MHz
58
IE = −7 mA
100
−80
100
25
−100
−120
yoe = goe + jboe
yfe = gfe + jbfe
VCE = 10 V
f = 10.7 MHz
0.1 0.2
VCE = 10 V
f = 150 MHz
− 0.5 − 0.4 − 0.3 − 0.2 − 0.1
0
)
0
0.3
0.4
(
0.5
0
20
40
60
80
(
100
)
(
)
Reverse transfer conductance gre mS
Output conductance goe mS
Forward transfer conductance gfe mS
SJC00114BED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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