INTEGRATED CIRCUITS
DATA SHEET
TDA2616/TDA2616Q
2 x 12 W hi-fi audio power
amplifiers with mute
July 1994
Product specification
File under Integrated Circuits, IC01
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
+ V
P
7
V
A
TDA2616
V
ref1
20 kΩ
CM
680 Ω
V
B
1
INV1
20 kΩ
4
OUT1
4 kΩ
2
MUTE
– V
P
5 kΩ
+ V
P
V
ref3
10 kΩ
+ V
P
V
+ V
ref2
THERMAL
PROTECTION
V
ref1
3
1/2 V / GND
P
voltage
comparator
V
B
10 kΩ
– V
A
ref2
– V
– V
P
P
20 kΩ
6
OUT2
9
8
CM
INV2
680 Ω
V
B
INV1, 2
20 kΩ
V
ref1
V
A
5
MCD375 - 1
– V
P
Fig.1 Block diagram.
3
July 1994
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
PINNING
SYMBOL
FUNCTIONAL DESCRIPTION
The TDA2616 is a hi-fi stereo amplifier designed for mains
fed applications, such as stereo radio and TV. The circuit
is optimally designed for symmetrical power supplies, but
is also well-suited to asymmetrical power supply systems.
PIN
DESCRIPTION
non-inverting input 1
−INV1
MUTE
1/2VP/GND
OUT1
−VP
1
2
3
4
5
6
7
8
9
mute input
1/2 supply voltage or ground
output 1
An output power of 2 × 12 W (THD = 0.5%) can be
delivered into an 8 Ω load with a symmetrical power supply
of ±16 V. The gain is internally fixed at 30 dB, thus offering
a low gain spread and a very good gain balance between
the two amplifiers (0.2 dB).
supply voltage (negative)
output 2
OUT2
+VP
supply voltage (positive)
inverting inputs 1 and 2
non-inverting input 2
A special feature is the input mute circuit. This circuit
disconnects the non-inverting inputs when the supply
voltage drops below ±6 V, while the amplifier still retains its
DC operating adjustment. The circuit features suppression
of unwanted signals at the inputs, during switch-on and
switch-off.
INV1, 2
−INV2
handbook, halfpage
INV1
1
The mute circuit can also be activated via pin 2. When a
current of 300 µA is present at pin 2, the circuit is in the
mute condition.
MUTE
2
3
4
5
6
7
8
9
1/2 V / GND
P
The device is provided with two thermal protection circuits.
One circuit measures the average temperature of the
crystal and the other measures the momentary
temperature of the power transistors. These control
circuits attack at temperatures in excess of +150 °C, so a
crystal operating temperature of max. +150 °C can be
used without extra distortion.
OUT1
V
P
TDA2616
OUT2
+ V
P
INV1, 2
INV2
With the derating value of 2.5 K/W, the heatsink can be
calculated as follows:
MCD372 - 1
at RL = 8 Ω and VP = ±16 V, the measured maximum
dissipation is 14.6 W.
Fig.2 Pin configuration.
With a maximum ambient temperature of +65 °C, the
thermal resistance of the heatsink is:
150 – 65
Rth
=
– 2.5 = 3.3 K/W.
----------------------
14.6
The internal metal block has the same potential as pin 5.
July 1994
4
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
LIMITING VALUES
In accordance with the Absolute maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
21
UNIT
±VP
IOSM
Ptot
supply voltage
−
−
−
−55
−
V
non-repetitive peak output current
total power dissipation
4
A
see Fig.3
25
W
°C
°C
°C
h
Tstg
TXTAL
Tamb
tsc
storage temperature range
crystal temperature
+150
+150
150
1
ambient operating temperature range
short circuit time
−25
−
short-circuit to ground; note 1
Note to the limiting values
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to
VP = 28 V and with an internal supply resistance of RS ≥ 4 Ω, the maximum unloaded supply voltage is limited to 32 V
(with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to VP = ±21 V.
MCD376 - 2
32
handbook, halfpage
P
tot
(W)
24
infinite
heatsink
16
R
= 3.3 K/W
th-hs
8
0
– 25
0
50
100
T
150
C)
o
(
amb
Fig.3 Power derating curve.
THERMAL RESISTANCE
SYMBOL
PARAMETER
from junction to ambient in free air
THERMAL RESISTANCE
Rth j-a
2.5 K/W
July 1994
5
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
CHARACTERISTICS
SYMBOL
Supply
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
±VP
IORM
supply voltage range
repetitive peak output current
−
−
16
21
V
A
2.2
−
Operating position; note 1
±VP
IP
supply voltage range
total quiescent current
output power
7.5
18
16
40
21
70
V
RL = ∞
mA
PO
THD = 0.5%
THD = 10%
10
12
−
12
−
−
0.2
−
W
W
%
15
THD
B
total harmonic distortion
power bandwidth
PO = 6 W
0.15
THD = 0.5%; note 2
−
20 to
20 000
Hz
Gv
voltage gain
29
−
−
14
40
46
−
30
0.2
70
20
60
70
0.3
30
4
31
1
dB
dB
µV
kΩ
dB
dB
µA
mV
mV
Gv
gain unbalance
Vno
noise output voltage
input impedance
note 3
140
26
−
−
−
Zi
SVRR
α
Ibias
∆VGND
∆V4-6
supply voltage ripple rejection
channel separation
input bias current
note 4
RS = 0
DC output offset voltage
DC output offset voltage
−
−
200
150
between two channels
MUTE POSITION (AT IMUTE ≥ 300 µA)
VO
output voltage
VI = 600 mV
note 7
−
0.3
9
1.0
11.3
70
mV
kΩ
mA
µV
Z2-7
mute input impedance
total quiescent current
noise output voltage
supply voltage ripple rejection
DC output offset voltage
6.7
18
−
40
−
IP
RL = ∞
note 3
40
70
55
40
4
Vno
140
−
200
150
SVRR
∆VGND
∆Voff
note 4
dB
mV
mV
offset voltage with respect to operating
position
−
I2
current if pin 2 is connected to pin 5
−
−
8.2
mA
Mute position; note 5
±VP
IP
supply voltage range
2
−
5.8
40
V
total quiescent current
output voltage
RL = ∞
VI = 600 mV
note 3
9
30
0.3
70
55
mA
mV
µV
dB
VO
−
−
40
1.0
140
−
Vno
SVRR
noise output voltage
supply voltage ripple rejection
note 4
July 1994
6
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
∆VGND
DC output offset voltage
−
40
40
200
mV
Operating position; note 6
IP
total quiescent current
18
70
mA
PO
output power
THD = 0.5%
5
6
−
−
−
−
0.2
−
W
W
W
W
%
THD = 10%
6.5
−
−
−
−
8
THD = 0.5%; RL = 4 Ω
THD = 10%; RL = 4 Ω
PO = 4 W
10
14
THD
B
total harmonic distortion
power bandwidth
0.13
THD = 0.5%; note 2
40 to
20 000
Hz
Gv
voltage gain
29
−
−
14
35
−
30
0.2
70
20
44
45
31
1
dB
dB
µV
kΩ
dB
dB
Gv
gain unbalance
Vno
Zi
noise output voltage
input impedance
note 3
140
26
−
SVRR
α
supply voltage ripple rejection
channel separation
−
MUTE POSITION (IMUTE ≥ 300 µA)
VO
output voltage
VI = 600 mV
note 7
−
0.3
9
1.0
11.3
70
mV
kΩ
mA
µV
Z2-7
IP
mute input impedance
total quiescent current
noise output voltage
supply voltage ripple rejection
6.7
18
−
35
−
40
70
44
4
Vno
note 3
note 4
140
−
SVRR
∆Voff
dB
offset voltage with respect to operating
position
150
mV
I2
current if pin 2 is connected to pin 5
−
−
8.2
mA
Notes to the characteristics
1. VP = ±16 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; symmetrical power supply IMUTE < 30 µA. See Fig.4
2. The power bandwidth is measured at an output power of PO max − 3 dB
3. The noise output voltage (RMS value) is measured at RS = 2 kΩ, unweighted (20 Hz to 20 kHz)
4. The ripple rejection is measured at RS = 0 and f = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at
f = 1 kHz
5. ±VP = 4 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; symmetrical power supply. See Fig.4
6. VP = 24 V; RL = 8 Ω; Tamb = 25 °C; f = 1 kHz; asymmetrical power supply IMUTE < 30 µA. See Fig.5
7. The internal network at pin 2 is a resistor devider of typical 4 kΩ and 5 kΩ to the positive supply rail. At the connection
of the 4 kΩ and 5 kΩ resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.
July 1994
7
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
mute input
+ V
P
2200 µF
2
7
680 Ω
20 kΩ
4
220 nF
1
3
9
V
I
22 nF
20 kΩ
TDA2616
8.2 Ω
R
= 8 Ω
L
20 kΩ
100 nF
220 nF
V
I
6
22 nF
680 Ω
20 kΩ
8
8.2 Ω
R
= 8 Ω
L
5
– V
P
MCD374 - 3
2200 µF
Fig.4 Test and application circuit with symmetrical power supply.
July 1994
8
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
R
S
V
P
V
S
mute input
100 nF
2200 µF
2
7
680 Ω
20 kΩ
4
220 nF
1
3
V
I
22 nF
680 µF
20 kΩ
8.2 Ω
R
= 8 Ω
L
internal
1/2 V
TDA2616
100 µF
P
20 kΩ
220 nF
9
8
V
I
6
22 nF
680 µF
680 Ω
20 kΩ
8.2 Ω
R
= 8 Ω
L
5
MCD373 - 2
Fig.5 Test and application circuit with asymmetrical power supply.
July 1994
9
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
PACKAGE OUTLINES
SIL9P: plastic single in-line power package; 9 leads
SOT131-2
non-concave
x
D
h
D
E
h
view B: mounting base side
d
A
2
B
E
j
A
1
b
L
c
1
9
e
Q
w
M
Z
b
p
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
max.
b
max.
1
(1)
(1)
(1)
UNIT
A
b
c
D
d
D
E
e
E
j
L
Q
w
x
Z
2
p
h
h
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
12.2
11.8
3.4
3.1
17.2
16.5
2.00
1.45
2.1
1.8
6
mm
2.0
1.1
10
2.54
0.25
0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-11-17
95-03-11
SOT131-2
July 1994
10
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm)
SOT157-2
non-concave
D
h
x
D
E
h
view B: mounting base side
d
A
2
B
j
E
A
L
3
L
Q
c
1
9
e
e
m
v
M
w
M
1
Z
2
b
p
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
(1)
(1)
UNIT
A
A
b
c
D
d
D
E
e
e
e
E
j
L
L
3
m
Q
v
w
x
Z
2
p
h
1
2
h
17.0 4.6 0.75 0.48 24.0 20.0
15.5 4.2 0.60 0.38 23.6 19.6
12.2
11.8
3.4 12.4 2.4
3.1 11.0 1.6
2.00
1.45
2.1
1.8
6
mm
10
5.08 2.54 5.08
4.3
0.8 0.25 0.03
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
92-10-12
95-03-11
SOT157-2
July 1994
11
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
July 1994
12
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