Philips Stereo Amplifier BGA2003 User Manual

DISCRETE SEMICONDUCTORS  
DATA SHEET  
BGA2003  
Silicon MMIC amplifier  
Product specification  
1999 Jul 23  
Supersedes data of 1999 Feb 25  
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VS  
VCTRL  
IS  
PARAMETER  
supply voltage  
CONDITIONS  
RF input AC coupled  
MIN.  
MAX.  
4.5  
UNIT  
V
V
voltage on control pin  
supply current (DC)  
2
forced by DC voltage on RF input  
or ICTRL  
30  
mA  
ICTRL  
Ptot  
Tstg  
Tj  
control current  
65  
3
mA  
mW  
°C  
total power dissipation  
storage temperature  
operating junction temperature  
Ts 100 °C  
135  
+150  
150  
°C  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-s  
thermal resistance from junction to soldering point  
350  
K/W  
CHARACTERISTICS  
RF input AC coupled; Tj = 25 °C; unless otherwise specified.  
SYMBOL  
IS  
PARAMETER  
supply current  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
VVS-OUT = 2.5 V; ICTRL = 0.4 mA  
3
8
4.5  
11  
24  
6
mA  
mA  
dB  
V
VS-OUT = 2.5 V; ICTRL = 1.0 mA  
VS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 900 MHz  
15  
MSG  
maximum stable gain  
insertion power gain  
isolation  
V
V
VS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 1800 MHz  
16  
2
dB  
2
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 900 MHz  
18  
13  
19  
dB  
|s21  
s12  
NF  
|
V
VS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 1800 MHz  
14  
dB  
VVS-OUT = 2.5 V; IVS-OUT = 0;  
f = 900 MHz  
26  
dB  
VVS-OUT = 2.5 V; IVS-OUT = 0;  
f = 1800 MHz  
20  
dB  
noise figure  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 900 MHz; ΓS = Γopt  
VS-OUT = 2.5 V; IVS-OUT = 10 mA;  
f = 1800 MHz; ΓS = Γopt  
VVS-OUT = 2.3 V; IVS-OUT = 3.6 mA;  
f = 900 MHz  
1.8  
1.8  
6.5  
4.8  
dB  
V
2
dB  
IP3(in)  
input intercept point; note 1  
dBm  
dBm  
VVS-OUT = 2.3 V; IVS-OUT = 3.5 mA;  
f = 1800 MHz  
Note  
1. See application note RNR-T45-99-B-0514.  
1999 Jul 23  
3
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
MGS537  
200  
handbook, halfpage  
P
tot  
(mW)  
100 pF  
handbook, halfpage  
R1  
C
V
S
150  
L1  
4
RF out  
R
CTRL  
100  
50  
V
3
CTRL  
BGA2003  
2
1
C
0
0
50  
100  
150  
200  
RF in  
T
(°C)  
MGS536  
s
Fig.2 Typical application circuit.  
Fig.3 Power derating.  
MGS538  
MGS539  
2.5  
30  
handbook, halfpage  
handbook, halfpage  
I
CTRL  
(mA)  
I
VS-OUT  
(mA)  
2
20  
1.5  
1
10  
0.5  
0
0
0
0
0.5  
1
1.5  
2
0.5  
1
1.5  
2
2.5  
I
(mA)  
V
(V)  
CTRL  
CTRL  
ICTRL = (VCTRL 0.83)/296.  
VS-OUT = 2.5 V.  
Fig.4 Control current as a function of the control  
voltage on pin 3; typical values.  
Fig.5 Bias current as a function of the control  
current; typical values.  
1999 Jul 23  
4
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
MGS540  
(6)  
MGS541  
30  
20  
handbook, halfpage  
handbook, halfpage  
I
VS-OUT  
(mA)  
25  
I
VS-OUT  
(mA)  
(5)  
(4)  
(3)  
15  
20  
15  
10  
5
10  
5
(2)  
(1)  
0
0
0
40  
0
40  
80  
120  
(°C)  
1
2
3
4
5
T
V
(V)  
amb  
VS-OUT  
VS-OUT = 2.5 V.  
(1) ICTRL = 0.2 mA.  
(4) ICTRL = 1.5 mA.  
(2)  
ICTRL = 0.4 mA.  
(5)  
ICTRL = 2.0 mA.  
(3) ICTRL = 1.0 mA.  
(6) ICTRL = 2.5 mA.  
ICTRL = 1 mA.  
Fig.6 Bias current (IVS-OUT) as a function of the  
ambient temperature with ICTRL as  
parameter; typical values.  
Fig.7 Bias current (IVS-OUT) as a function of the  
voltage at the output pin (VVS-OUT); typical  
values.  
MGS543  
MGS542  
30  
handbook, halfpage  
gain  
25  
handbook, halfpage  
f
T
(dB)  
(GHz)  
25  
20  
15  
10  
5
MSG  
G
max  
20  
G
UM  
15  
10  
5
0
0
0
5
10  
15  
20  
25  
0
10  
20  
I
30  
(mA)  
I
(mA)  
VS-OUT  
VS-OUT  
VVS-OUT = 2.5 V; f = 1000 MHz.  
VVS-OUT = 2.5 V; f = 900 MHz.  
Fig.8 Transition frequency as a function of the  
bias current (IVS-OUT); typical values.  
Fig.9 Gain as a function of the bias current  
(IVS-OUT); typical values.  
1999 Jul 23  
5
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
MGS545  
MGS544  
40  
25  
handbook, halfpage  
handbook, halfpage  
gain  
(dB)  
gain  
(dB)  
MSG  
20  
30  
20  
10  
0
G
max  
15  
G
UM  
G
UM  
G
max  
10  
5
0
2
3
4
10  
10  
10  
0
5
10  
15  
20  
25  
f (MHz)  
I
(mA)  
VS-OUT  
VVS-OUT = 2.5 V; f = 1800 MHz.  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA.  
Fig.10 Gain as a function of the bias current  
(IVS-OUT); typical values.  
Fig.11 Gain as a function of frequency; typical  
values.  
MGS546  
3
min  
handbook, halfpage  
NF  
(dB)  
2.5  
2
(1)  
(3)  
(2)  
1.5  
(4)  
1
0.5  
0
2
1
10  
10  
I
(mA)  
VS-OUT  
(1) f = 2400 MHz.  
(2) f = 1800 MHz.  
(3) f = 1000 MHz.  
(4) f = 900 MHz.  
Fig.12 Minimum noise figure as a function of the  
bias current (IVS-OUT); typical values.  
1999 Jul 23  
6
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
90°  
unstable region  
1.0  
0.8  
0.6  
0.4  
0.2  
0
source  
+1  
135°  
45°  
+2  
unstable  
region load  
+0.5  
(1)  
(2)  
+0.2  
+5  
(3)  
Γopt  
0.2  
0.5  
1
2
5
180°  
0°  
0
(4)  
5  
0.2  
(5)  
(6)  
f = 900 MHz; VVS-OUT = 2.5 V;  
IVS-OUT = 10 mA; Zo = 50 .  
(1) G = 23 dB.  
(2) G = 22 dB.  
(3) G =21 dB.  
(4) NF = 1.8 dB.  
(5) NF = 2 dB.  
(6) NF = 2.2 dB.  
0.5  
2  
45°  
135°  
1  
1.0  
90°  
MGS547  
Fig.13 Noise, stability and gain circles; typical values.  
90°  
unstable region  
source  
1.0  
unstable  
region load  
+1  
0.8  
0.6  
0.4  
0.2  
0
135°  
45°  
+2  
+0.5  
(4)  
(3)  
(2)  
(1)  
+0.2  
+5  
0.2  
0.5  
1
2
5
180°  
0°  
0
Γopt  
f = 1800 MHz; VVS-OUT = 2.5 V;  
IVS-OUT = 10 mA; Zo = 50 .  
(5)  
5  
0.2  
(6)  
(7)  
(1)  
Gmax = 16.1 dB.  
(2) G = 16 dB.  
(3) G = 15 dB.  
(4) G = 14 dB.  
(5) NF = 1.9 dB.  
(6) NF = 2.1 dB.  
(7) NF = 2.3 dB.  
0.5  
2  
45°  
135°  
1  
1.0  
90°  
MGS548  
Fig.14 Noise, stability and gain circles; typical values.  
1999 Jul 23  
7
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+1  
135°  
45°  
+2  
+0.5  
+0.2  
+5  
0.2  
0.5  
1
2
5
180°  
0°  
0
1 GHz  
100 MHz  
2 GHz  
3 GHz  
200 MHz  
500 MHz  
5  
0.2  
0.5  
2  
45°  
135°  
1  
90°  
1.0  
MGS549  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 .  
Fig.15 Common emitter input reflection coefficient (s11); typical values.  
90°  
135°  
45°  
500 MHz  
900 MHz  
1 GHz  
200 MHz  
1.8 GHz  
3 GHz  
100 MHz  
20  
16  
12  
8
4
180°  
0°  
135°  
45°  
MGS550  
90°  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 .  
Fig.16 Common emitter forward transmission coefficient (s21); typical values.  
8
1999 Jul 23  
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
90°  
135°  
45°  
3 GHz  
0.5  
0.4  
0.3  
0.2  
0.1  
180°  
0°  
100 MHz  
135°  
45°  
MGS551  
90°  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 .  
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.  
90°  
1.0  
+1  
0.8  
135°  
45°  
+2  
+0.5  
0.6  
0.4  
0.2  
0
+0.2  
+5  
0.2  
0.5  
1
2
5
180°  
0°  
0
100 MHz  
900 MHz  
200 MHz  
1 GHz  
5  
0.2  
500 MHz  
3 GHz  
1.8 GHz  
0.5  
2  
45°  
135°  
1  
1.0  
90°  
MGS552  
VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 .  
Fig.18 Common emitter output reflection coefficient (s22); typical values.  
9
1999 Jul 23  
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
PACKAGE OUTLINE  
Plastic surface mounted package; reverse pinning; 4 leads  
SOT343R  
D
B
E
A
X
H
v
M
y
A
E
e
3
4
Q
A
A
1
c
2
1
L
p
w
M
B
b
p
b
1
e
1
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4  
0.3  
1.1  
0.8  
0.7  
0.5  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.15  
0.2  
0.2  
0.1  
1.3  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT343R  
97-05-21  
1999 Jul 23  
10  
 
Philips Semiconductors  
Product specification  
Silicon MMIC amplifier  
BGA2003  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Jul 23  
11  
 
Philips Semiconductors – a worldwide company  
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220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773  
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Belgium: see The Netherlands  
Philippines: Philips Semiconductors Philippines Inc.,  
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Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
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Slovakia: see Austria  
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Hungary: see Austria  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
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Tel. +41 1 488 2741 Fax. +41 1 488 3263  
Indonesia: PT Philips Development Corporation, Semiconductors Division,  
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Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
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MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
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Uruguay: see South America  
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Vietnam: see Singapore  
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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1999  
SCA67  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
125006/04/pp12  
Date of release: 1999 Jul 23  
Document order number: 9397 750 06134  
 

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