This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC1318A
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0720A
Unit: mm
5.0 0.2
4.0 0.2
■ Features
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
0.7 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
+0.15
+0.15
0.45
0.45
–0.1
–0.1
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
80
+0.6
+0.6
2.5
–0.2
2.5
–0.2
70
V
1
2
3
5
V
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Collector current
IC
ICP
PC
Tj
0.5
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1
750
A
mW
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
80
70
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
VCB = 20 V, IE = 0
0.1
µA
V
1
2
Forward current transfer ratio *
hFE1
hFE2
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
85
40
340
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC = 300 mA, IB = 30 mA
0.2
0.85
120
11
0.6
VBE(sat) IC = 300 mA, IB = 30 mA
1.50
V
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
MHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Publication date: March 2003
SJC00101BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1318A
ICEO Ta
105
104
103
102
10
VCE = 10 V
1
0
40
80
120
(
)
Ambient temperature Ta °C
SJC00101BED
3
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