This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1320A
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
6.9 0.1
(4.0)
2.5 0.1
(0.8)
Complementary to 2SD1991A
(0.7)
■ Features
• High forward current transfer ratio hFE
• Allowing supply with the radial taping
0.65 max.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
−60
Unit
V
+0.10
+0.10
0.45
0.45
–0.05
–0.05
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1.05 0.05
2.5 0.5
−50
V
2.5 0.5
−7
V
1: Emitter
2: Collector
3: Base
Collector current
IC
ICP
PC
Tj
−100
−200
400
mA
mA
mW
°C
1
2
3
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
MT-1-A1 Package
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−60
−50
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
VCE = −10 V, IC = −2 mA
V
−1
−1
µA
µA
ICEO
hFE
160
460
−1
VCE(sat) IC = −100 mA, IB = −10 mA
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
3.5
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
SJC00078BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1320A
Cre VCE
NF IE
NF IE
6
5
4
3
2
1
0
20
18
16
14
12
10
8
6
5
4
3
2
1
IE = 1 mA
VCB = −5 V
Rg = 50 kΩ
Ta = 25°C
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
f = 10.7 MHz
Ta = 25°C
f = 100 Hz
1 kHz
10 kHz
6
4
2
0
0.1
0
0.01
0
−5
−10 −15 −20 −25 −30
1
10
0.1
1
10
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Emitter current IE mA
Emitter current IE mA
h Parameter IE
h Parameter VCB
ICBO Ta
100
VCB = −5 V
f = 270 Hz
Ta = 25°C
IE = −2 mA
VCB = −10 V
f = 270 Hz
Ta = 25°C
hfe
hfe
100
100
hoe (µS)
10
hoe (µS)
10
10
hie (kΩ)
hre (×10−4
)
hie (kΩ)
hre (×10−4
)
1
0.1
1
−1
1
1
10
−10
−100
0
25
)
Ambient temperature Ta °C
50
75
100 125 150
(
)
( )
V
(
Emitter current IE mA
Collector-base voltage VCB
SJC00078BED
3
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semiconductors described in this book
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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